Basic properties of GaAs oxide generated by scanning probe microscope tip-induce

2019-11-09 22:43:37

Microscope GaAs ray tip oxide

责任者: Okada, Y.;Iuchi, Y.;Kawabe, M.;Harris, J.S., Jr. 单位: Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan 来源出处: Journal of Applied Physics(J. Appl. Phys. (USA)),2000/07/15,88(2):1136-40 摘要: The basic properties of GaAs oxide generated by atomic force microscope (AFM) tip-induced nano-oxidation process have been investigated. The chemical analysis of the AFM tip-generated GaAs oxide was performed by using scanning microprobe X-ray photoelectron spectroscopy, and the main constituents of GaAs anodic oxide were determined to be Ga2O3 and As2O3. The electrical characterization showed that the electron transport across a GaAs oxide nanodot of ~5.7 nm thickness, from a doped n+-Si tip into the n+-GaAs substrate follows the Fowler-Nordheim tunneling mechanism over a range of applied bias. Further, the tip-generated GaAs oxide nanodots were found to withstand moderate thermal treatments, but some volume reduction was observed 关键词: atomic force microscopy;gallium arsenide;gallium compounds;III-V semiconductors;semiconductor quantum dots;X-ray chemical analysis;X-ray photoelectron spectra;GaAs oxide;scanning probe microscope tip-induced nano-oxidation process;atomic force microscope;chemical analysis;scanning microprobe x-ray photoelectron spectroscopy;electrical characterization;electron transport;Fowler-Nordheim tunneling mechanism;volume reduction;GaAsO