Electrical measurements of individual semiconducting single-walled carbon nanotu

2019-11-09 00:54:26

high carbon bias nanotubes Semiconducting

责任者: Chongwu Zhou;Jing Kong;Hongjie Dai 单位: Dept. of Chem., Stanford Univ., CA, USA 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),2000/03/20,76(12):1597-9 摘要: Individual semiconducting single-walled carbon nanotubes (SWNTs) of various diameters are studied by electrical measurements. Transport through a semiconducting SWNT involves thermal activation at high temperatures, and tunneling through a reverse biased metal-tube junction at low temperatures. Under high bias voltages, current-voltage (I-V) characteristics of semiconducting SWNTs exhibit pronounced asymmetry with respect to the bias polarity, as a result of local gating. SWNT transistors that mimic conventional p-metal-oxide-semiconductor field-effect transistor with similar I-V characteristics and high transconductance are enabled 关键词: carbon nanotubes;electrical conductivity;semiconductor materials;tunnelling;electrical measurements;individual semiconducting single-walled carbon nanotubes;thermal activation;tunneling;reverse biased metal-tube junction;high bias voltages;current-voltage characteristics;bias polarity;local gating;C