Selective growth of nanocrystalline Si dots using an ultrathin-Si-oxide/oxynitri

2019-11-08 00:29:37

Si growth oxide DOTS oxynitride

责任者: Miyata, N.;Watanabe, H.;Ichikawa, M. 单位: Joint Res. Center for Atom Technol., Angstrom Technol. Partnership, Ibaraki, Japan 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),11 Sept. 2000,77(11):1620-2 摘要: We demonstrate the selective growth of nanocrystalline Si (nc-Si) dots by using ultrathin-Si-oxide/oxynitride mask and low-pressure chemical vapor deposition. The oxynitride layer is selectively grown on the Si(001)-2×1 open window formed in the ultrathin oxide layer by electron-beam-induced selective thermal decomposition. The 10-nm-scale hemispherical nc-Si dots grow selectively on the oxynitride-covered window within the incubation period in which Si growth does not occur on the oxide-covered surface 关键词: CVD coatings;elemental semiconductors;nanostructured materials;semiconductor growth;semiconductor quantum dots;silicon;selective growth;nanocrystalline Si dots;ultrathin-Si-oxide/oxynitride mask;low-pressure chemical vapor deposition;oxynitride layer;Si(001)-2×1 open window;electron-beam-induced selective thermal decomposition;10 nm;Si;SiO2-SiNO-Si