Electronic properties of low-dimensional Si nanostructures. I. Local electronic

2019-11-07 06:29:22

Si analysis binding Japan PL

责任者: Koga, J.;Nishio, K.;Ohtani, H.;Yamaguchi, T.;Yonezawa, F. 单位: Dept. of Phys., Keio Univ., Yokohama, Japan 来源出处: Journal of the Physical Society of Japan(J. Phys. Soc. Jpn. (Japan)),2000/07/,69(7):2188-91 摘要: Although extensive studies have been carried out concerning the effective visible photoluminescence (PL) from porous and nanostructure Si, no conclusive argument about the mechanism of PL has been reported so far. The well-known quantum confinement model is appealing, but is an oversimplified model. As a first step towards a detailed analysis of the problem, we report in this series of papers local electronic properties of low-dimensional Si nanostructures, calculated in the non-orthogonal tight-binding (NTB) scheme. In the present paper (part 1), we propose the existence of characteristic “layer states” for the electrons in a quantum wire, which is important in a, detailed analysis of PL from Si. A succeeding paper (part 2) will be devoted Is the analysis of the local density of states 关键词: elemental semiconductors;localised states;nanostructured materials;photoluminescence;silicon;tight-binding calculations;low-dimensional Si nanostructures;local electronic probabilities;effective visible photoluminescence;quantum confinement model;nonorthogonal tight-binding scheme;Si