Spin-dependent tunneling in self-assembled cobalt-nanocrystal superlattices

2019-11-05 12:53:04

electron spin cobalt dependent

责任者: Black, C.T.;Murray, C.B.;Sandstrom, R.L.;Sun, S. 单位: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA 来源出处: Science(Science (USA)),2000/11/10,290(5494):1131-4 摘要: Self-assembled devices composed of periodic arrays of 10-nanometer-diameter cobalt nanocrystals display spin-dependent electron transport. Current-voltage characteristics are well described by single-electron tunneling in a uniform array. At temperatures below 20 kelvin, device magnetoresistance ratios are on the order of 10%, approaching the maximum predicted for ensembles of cobalt islands with randomly oriented preferred magnetic axes. Low-energy spin-flip scattering suppresses magnetoresistance with increasing temperature and bias-voltage 关键词: cobalt;discontinuous metallic thin films;ferromagnetic materials;giant magnetoresistance;magnetic multilayers;magnetoresistive devices;nanostructured materials;quantum interference phenomena;self-assembly;tunnelling;spin-dependent tunneling;self-assembled cobalt-nanocrystal superlattices;self-assembled devices;periodic arrays;spin-dependent electron transport;current-voltage characteristics;single-electron tunneling;uniform array;device magnetoresistance ratios;cobalt islands;randomly oriented preferred magnetic axes;low-energy spin-flip scattering;bias-voltage;Co