Fine structure of the low-frequency Raman phonon bands of single-wall carbon nan

2019-11-04 06:54:39

frequency low Raman bands phonon

责任者: Iliev, M.N.;Litvinchuk, A.P.;Arepalli, S.;Nikolaev, P.;Scott, C.D. 单位: Texas Center for Supercond., Houston Univ., TX, USA 来源出处: Chemical Physics Letters(Chem. Phys. Lett. (Netherlands)),2000/01/14,316(3-4):217-21 摘要: The Raman spectra of single-wall carbon nanotubes produced by a laser and arc process were studied between 5 and 500 K. The linewidth versus temperature dependence of the low-frequency Raman bands between 150 and 200 cm-1 deviates from that expected for phonon decay through a phonon-phonon scattering mechanism. The experimental results and their analysis provide convincing evidence that each of the low-frequency Raman bands is a superposition of several narrower Raman lines corresponding to tubes of nearly the same diameter. At low temperatures the width Δ(T)=γ+Γ(T) of these components is determined mainly by the temperature-independent past γ=2 cm-1 关键词: carbon nanotubes;fine structure;phonon spectra;Raman spectra;fine structure;low-frequency Raman phonon bands;single-wall C nanotubes;Raman spectra;laser process;arc process;linewidth;temperature dependence;low-frequency Raman bands;phonon decay;phonon-phonon scattering mechanism;Raman lines;5 to 500 K;150 to 200 cm-1;C