Improved one-phonon confinement model for an accurate size determination of sili

2019-10-25 13:28:51

films size silicon nanocrystalline phonon

责任者: Paillard, V.;Puech, P.;Laguna, M.A.;Carles, R.;Kohn, B.;Huisken, F. 单位: Lab. de Phys. des Solides, Univ. Paul Sabatier, Toulouse, France 来源出处: Journal of Applied Physics(J. Appl. Phys. (USA)),1999/08/15,86(4):1921-4 摘要: In this article, we show how the well-known one-phonon confinement model can be improved to determine the diameter of silicon nanocrystalline spheres from the optical phonon wave-number shift, even using a physical-meaning weighting function. We show that the fundamental parameter is the knowledge of the phonon dispersion. The accuracy of our approach is supported by experimental data obtained by selective UV Raman scattering on nanocrystalline silicon thin films produced by size-selected silicon cluster beam deposition 关键词: elemental semiconductors;nanostructured materials;phonon dispersion relations;phonons;Raman spectra;semiconductor thin films;silicon;one-phonon confinement model;size determination;Si nanocrystals;nanocrystalline spheres;optical phonon wave-number shift;weighting function;phonon dispersion;UV Raman scattering;nanocrystalline thin films;size-selected cluster beam deposition;Si