Coherent X-ray diffraction imaging of silicon oxide growth

2019-10-25 12:54:59

ray oxide diffraction Phys USA

责任者: Robinson, I.K.;Libbert, J.L.;Vartanyants, I.A.;Pitney, J.A.;Smilgies, D.M.;Abernathy, D.L.;Grubel, G. 单位: Dept. of Phys., Illinois Univ., Urbana, IL, USA 来源出处: Physical Review B (Condensed Matter)(Phys. Rev. B, Condens. Matter (USA)),1999/10/01,60(14):9965-72 摘要: We have measured the morphology of Si samples as a function of time in air after stripping of the native oxide. For this purpose we examined the reflectivity of a coherent beam of X-rays, which produces a structured diffraction pattern. We have made further progress in the development of an inversion algorithm for conversion of these patterns into one-dimensional height images. Nanometer-sized features are found to grow and evolve in waves across the surface on the time scale of minutes to hours 关键词: elemental semiconductors;nanostructured materials;oxidation;silicon;surface topography;X-ray diffraction;coherent X-ray diffraction imaging;oxide growth;morphology;inversion algorithm;one-dimensional height images;nanometer-sized features;Si;SiO