Ultrathin silicon oxynitride films for giga-bit ULSI

2019-10-25 00:08:37

films SiO2 oxide ULSI Ultrathin

责任者: Fukuda, H. 单位: Dept. of Electr. & Electron. Eng., Muroran Inst. of Technol., Hokkaido, Japan 来源出处: Transactions of the Institute of Electronics, Information and Communication Engineers C-I(Trans. Inst. Electron. Inf. Commun. Eng. C-I (Japan)),1999/02/,J82C-I(2):35-41 摘要: The quality of ultrathin gate oxide films affects directly the device performance of fully-scaled MOSFETs of ULSI. In recent years, the thickness of gate oxide films becomes more decrease toward nanometer regime according to device scaling. For ultrathin SiO2 films, the SiO2/Si interface with atomic-level roughness and interfacial chemical bond has main role to determine the oxide quality resulting in controlling the performance and reliability of the MOSFETs. In addition, bulk oxide traps generated by hot-carrier injection change the electrical conduction accordingly provide the increase of leakage current and decrease of oxide breakdown voltage. The electrical properties of ultrathin oxide films are directly attributed to the oxide defects such as weak Si-O, Si-H bonds and/or dangling bonds localized near the SiO2/Si interface. Thus, if an ideal chemical bond is generated, highly reliable oxide films could be obtained. Most promising approach to obtain superior oxide quality is the oxynitridation of ultrathin SiO2 films. In this study, we will introduce its application to scaled MOSFETs, and will discuss the possibility of the oxynitride film alternative to to SiO2 films 关键词: insulating thin films;MOSFET;silicon compounds;ULSI;ultrathin silicon oxynitride film;ULSI;bulk traps;MOSFET;chemical bonds;interfacial roughness;electrical properties;defects;dangling bonds;reliability;hot carrier injection;electrical conduction;leakage current;breakdown voltage;SiON