Scattering time engineering in quantum-based electronic devices

2019-10-22 16:32:38

devices dimensional quantum phonon dot

责任者: Leburton, J.-P. 单位: Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA 来源出处: International Journal of High Speed Electronics and Systems(Int. J. High Speed Electron. Syst. (Singapore)),1998/03/,9(1):125-44 摘要: The interplay between geometrical confinement and materials considerations can efficiently reduce phonon-assisted transport, enabling scattering time and dissipation engineering in quantum devices. In resonant tunneling (RT) structures, quenching of phonon-assisted transmission leading to considerable reduction of the off-resonance valley-current is shown to occur in interband devices. In low dimensional structures such as quantum wires, electron-phonon scattering exhibits size effects and intersubband resonances which modulate the drift velocity and conductance of one-dimensional systems. Quantum dot nanostructures offer large flexibility for reduction and modulation of dissipative processes such as oscillatory hopping conductance induced by acoustic phonons in linear chains of quantum dots or negative differential resistance curve shaping in RT through quantum dot arrays 关键词: electron-phonon interactions;hopping conduction;nanotechnology;resonant tunnelling;resonant tunnelling devices;semiconductor quantum dots;semiconductor quantum wires;size effect;scattering time engineering;quantum-based electronic devices;geometrical confinement;phonon-assisted transport;dissipation engineering;quantum devices;resonant tunneling structures;phonon-assisted transmission quenching;off-resonance valley-current;interband devices;low dimensional structures;quantum wires;electron-phonon scattering;size effects;intersubband resonances;drift velocity modulation;conductance modulation;one-dimensional systems;quantum dot nanostructures;dissipative processes;dissipative process reduction;dissipative process modulation;oscillatory hopping conductance;acoustic phonons;linear quantum dot chains;negative differential resistance curve shaping;quantum dot arrays