Quantum wells within quantum dots, a CdS/HgS nanoheterostructure with global and

2019-10-22 15:52:59

quantum CdS DOTS wells HgS

责任者: Mews, A.;Eychmuller, A. 单位: Inst. fur Phys. Chem., Mainz Univ., Germany 来源出处: Berichte der Bunsen-Gesellschaft - Physical Chemistry, Chemical Physics(Ber. Bunsen-Ges. Phys. Chem. Chem. Phys. (Germany)),1998/10/,102(10):1343-57 摘要: Semiconductor nanocrystals prepared by methods of wet chemistry are similar to MBE grown quantum dots where the mobility of the charge carriers is reduced to zero dimensionality. In this paper we summarize the physics of a unique system in which the charge carriers are locally confined within a heterogeneous quantum dot. With high resolution electron microscopy we will show that epitaxial growth ot atomic layer precision is possible by methods of solution chemistry leading to CdS quantum dots with embedded HgS quantum wells (QDQWs). The photophysics of this system is investigated by time-correlated single photon counting, transient differential absorption and fluorescence line narrowing spectroscopies. The results reflect the very complex electronic structure of this new kind of matter which can be explained by an extended effective mass approach 关键词: cadmium compounds;carrier mobility;effective mass;electron microscopy;fluorescence;II-VI semiconductors;mercury compounds;semiconductor quantum dots;semiconductor quantum wells;time resolved spectra;CdS-HgS nanoheterostructure;global confinement;local confinement;wet chemistry;semiconductor nanocrystals;charge carrier mobility;heterogeneous quantum dot;high resolution electron microscopy;epitaxial growth;embedded HgS quantum wells;CdS quantum dots;photophysics;time-correlated single photon counting;transient differential absorption spectra;fluorescence line narrowing spectroscopy;electronic structure;extended effective mass approach;CdS;HgS;CdS-HgS