Analysis of spin-dependent tunnelling of electrons in solid state structures usi

2019-10-18 15:27:47

magnetic transfer spin dependent tunnelling

责任者: Reittu, H.J. 单位: Wihuri Phys. Lab., Turku Univ., Finland 来源出处: Journal of Physics: Condensed Matter(J. Phys., Condens. Matter. (UK)),1997/12/01,9(48):10651-60 摘要: The transfer-Hamiltonian (t-H) method is applied to study the spin-dependent low-rate transfer of electrons between magnetically ordered metallic electrodes separated by a potential barrier. Weak coupling of the electrodes through the potential barrier is described with the help of t-H treated as a perturbation. Spin-dependent tunnelling probability amplitudes are expressed by a 2×2 matrix with elements evaluated through an overlap between the spinor components of the electron wavefunctions from both sides of the potential barrier, resulting in spin-dependent tunnelling current and tunnelling conductance. In particular, the magnetic valve effect in tunnelling between two ferromagnets and elements of the theory of a spin-polarized scanning tunnelling microscope with a ferromagnetic tip are analysed. The t-H method is useful also in applications to tunnelling in magnetic nanostructures and multilayers 关键词: electric admittance;electrodes;electron spin polarisation;ferromagnetic materials;interface magnetism;magnetic multilayers;probability;scanning tunnelling microscopy;tunnelling;wave functions;spin-dependent electron tunnelling;solid state structures;transfer-Hamiltonian method;spin-dependent low-rate electron transfer;magnetically ordered metallic electrodes;potential barrier;weak electrode coupling;perturbation;spin-dependent tunnelling probability amplitudes;2×2 matrix;spinor components;electron wave functions;spin-dependent tunnelling current;spin-dependent tunnelling conductance;magnetic valve effect;ferromagnets;spin-polarized scanning tunnelling microscope;ferromagnetic tip;magnetic nanostructures;magnetic multilayers