Electron interaction with polar optical phonons in a semiconductor heterostructu

2019-10-18 10:33:26

interaction electron quantum semiconductor phonon

责任者: Comas, F.;Castro, F.;Gondar, J.L. 单位: Inst. de Fisica, Univ. Federal do Rio de Janeiro, Brazil 来源出处: Physica B(Physica B (Netherlands)),1997/08/29,239(3-4):370-7 摘要: We investigate the electron-phonon interaction in a semiconductor heterostructure (SH) on the basis of a macroscopic theory for polar optical phonons (POP) in semiconductor nano-structures. The used theory has led to a rather reliable description of POP in quantum wells, quantum wires and quantum dots. In the present work we derive an analytic expression for the electron-phonon hamiltonian with direct application to a SH. Scattering rates are calculated by applying this hamiltonian and the obtained results are discussed in detail 关键词: electron-phonon interactions;phonon dispersion relations;phonon spectra;semiconductor heterojunctions;semiconductor quantum dots;semiconductor quantum wells;semiconductor quantum wires;semiconductor heterostructure;quantum wells;quantum wires;quantum dot;electron phonon interaction;polar optical phonons;macroscopic theory;nanostructures;analytic expression;hamiltonian;scattering rates