Au/CdS Schottky diode fabricated with nanocrystalline CdS layer

2019-10-17 11:41:25

voltage layer Au CdS Schottky

责任者: Mandal, S.K.;Maity, A.B.;Dutta, J.;Pal, R.;Chaudhuri, S.;Pal, A.K. 单位: Dept. of Mater. Sci., Indian Assoc. for the Cultivation of Sci., Calcutta, India 来源出处: Physica Status Solidi A(Phys. Status Solidi A (Germany)),1997/10/16,163(2):433-43 摘要: Schottky diodes of structure Au/nano-CdS/CBD-CdS/SnO2 were fabricated with the nanocrystalline CdS layer deposited by the high pressure magnetron sputtering technique. The devices were characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It was observed that the presence of a large amount of surface states might explain the high values of n in the nano-devices. The quantization effects of the active nano-CdS layer in the devices was confirmed from the observed peaks in the plot of conductance versus reverse bias voltage 关键词: cadmium compounds;capacitance;electrical resistivity;electroless deposited coatings;gold;grain size;II-VI semiconductors;light absorption;mesoscopic systems;metallic thin films;nanostructured materials;Schottky barriers;Schottky diodes;semiconductor thin films;semiconductor-metal boundaries;sputtered coatings;surface states;tunnelling;Au CdS Schottky diode;nanocrystalline CdS layer;high pressure magnetron sputtering deposition;chemical bad deposited CdS;SnO2 coated glass substrate;Au nano CdS CBD CdS SnO2 structure;current voltage measurements;capacitance voltage measurements;surface states;diode quality factor;active nano CdS layer quantisation effects;conductance reverse bias voltage dependence;film optical transmittance;TEM;transmission electron microscopy;Au sputtered films;Au CBD CdS SnO2 diode comparison;quantum size effect;mesoscopic systems;thermionic emission;equivalent diode circuit;Norde parameter determination method;shunt resistance parameter;interfacial layer thickness;depletion layer width;energy band bending;resonant tunnelling;interface state density;Au;CdS;SnO2;Au-CdS