Raman-scattering study of exciton-phonon coupling in PbS nanocrystals

2019-10-16 10:36:21

coupling Raman nanocrystals phonon exciton

责任者: Krauss, T.D.;Wise, F.W. 单位: Dept. of Appl. Phys., Cornell Univ., Ithaca, NY, USA 来源出处: Physical Review B (Condensed Matter)(Phys. Rev. B, Condens. Matter (USA)),1997/04/15,55(15):9860-5 摘要: The exciton-phonon coupling strength of PbS nanocrystals that strongly confine both charge carriers is investigated using resonant Raman scattering. The strength of this coupling (Huang-Rhys parameter S~0.7) is four orders of magnitude greater than that predicted theoretically for the intrinsic states of the nanocrystal, but is the same order of magnitude as that measured for Cd(S,Se) nanocrystals. The large exciton-phonon coupling is consistent with one charge carrier being localized at the surface of the nanocrystal 关键词: II-VI semiconductors;lead compounds;localised states;nanostructured materials;phonon-exciton interactions;Raman spectra;semiconductor quantum dots;PbS nanocrystals;exciton-phonon coupling;resonant Raman scattering;Huang-Rhys parameter;intrinsic states;surface localized carriers;PbS