Electron-phonon and electron-electron interactions in one-dimensional GaAs quant

2019-10-15 00:48:24

electron quantum approximation phonon interactions

责任者: Hwang, E.H.;Das Sarma, S. 单位: Dept. of Phys., Maryland Univ., College Park, MD, USA 来源出处: Superlattices and Microstructures(Superlattices Microstruct. (UK)),1997//,21(1):1-5 摘要: We investigate quasiparticle damping rates and hot electron inelastic mean free paths for different confinement sizes and electron densities in the 1D quantum limit of a doped polar semiconductor (GaAs) quantum wire nanostructure. In this calculation the leading order dynamical screening approximation and random phase approximation are used 关键词: electron mean free path;electron-phonon interactions;gallium arsenide;III-V semiconductors;phonon-plasmon interactions;polar semiconductors;quasiparticles;RPA calculations;semiconductor quantum wires;electron-electron interactions;one-dimensional GaAs quantum wire nanostructures;electron-phonon interactions;quasiparticle damping rates;hot electron inelastic mean free paths;confinement sizes;electron densities;1D quantum limit;doped polar semiconductor;leading order dynamical screening approximation;random phase approximation;GaAs