Transmission electron holography of silicon nanospheres with surface oxide layer

2019-10-14 11:09:52

phase Si electron mean oxide

责任者: Wang, Y.C.;Chou, T.M.;Libera, M.;Kelly, T.F. 单位: Dept. of Mater. Sci. & Eng., Stevens Inst. of Technol., Hoboken, NJ, USA 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),1997/03/10,70(10):1296-8 摘要: Phase images of 20-30-nm-diam silicon spheres were collected by holographic methods in a field-emission transmission electron microscope. The spherical geometry enables the effect of specimen thickness on the electron-wave phase to be separated from the intrinsic Si electron-optical refractive effects allowing a determination of the mean inner potential Φ0. This work finds Φ0=11.9±0.9 V characterizing amorphous Si and 12.1±1.3 V characterizing crystalline Si. The phase images can resolve a 2-nm-thick native oxide layer and give Φ0 for SiO2=10.1+0.6 v. The phase data can quickly recognize a surface layer, and the effect of a surface layer on the determination of the bulk mean potential can be minimized 关键词: electron optics;elemental semiconductors;holography;nanostructured materials;semiconductor-insulator boundaries;silicon;transmission electron microscopy;transmission electron holography;Si nanospheres;surface oxide layers;phase images;field-emission transmission electron microscope;spherical geometry;specimen thickness;electron-wave phase;intrinsic Si electron-optical refractive effects;mean inner potential;amorphous Si;crystalline Si;native oxide layer;bulk mean potential;20 to 30 nm;Si