In situ electron-beam processing for GaAs/AlGaAs nanostructure fabrications

2019-10-10 13:17:27

beam electron damage EB nanometer

责任者: Ishikawa, T. 单位: Optoelectron. Technol. Res. Lab., Ibaraki, Japan 来源出处: Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes Review Papers)(Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes Rev. Pap. (Japan)),1996/11/,35(11):5583-96 摘要: The requirements for the fabrication technology of 2-dimensional and/or 3-dimensional nanometer-scale heterostructures with III-V compound semiconductors are described. In addition to a fabrication capability with nanometer accuracy, the processes must avoid both undesirable contaminations and any damage effect. To meet these requirements, we have developed in situ electron-beam (EB) processing in which all of the processes, including EB lithography, pattern etching and epitaxial overgrowth, are performed successively in an ultra-high vacuum-based environment. The present status of this technique, i.e. nanometer-scale patterning, cleanliness of the processed surfaces and damage-free characteristics, is discussed. It is also demonstrated that self-organized epitaxy, which is now being intensively studied, can be combined with in situ. EB processing as an elemental process 关键词: aluminium compounds;electron beam lithography;etching;gallium arsenide;III-V semiconductors;molecular beam epitaxial growth;nanostructured materials;semiconductor growth;semiconductor quantum wires;semiconductor technology;surface cleaning;GaAs/AlGaAs nanostructure;electron-beam processing;fabrication technology;damage effect;EB lithography;pattern etching;epitaxial overgrowth;ultra-high vacuum-based environment;nanometer-scale patterning;surface cleanliness;damage-free characteristics;self-organized epitaxy;GaAs-AlGaAs