Shot noise in the presence of phonon-assisted transport through quasiballistic n

2019-10-10 11:42:44

noise electron nanowires phonon quasiballistic

责任者: Gurevich, V.L.;Rudin, A.M. 单位: A.F. Ioffe Inst., Acad. of Sci., St. Petersburg, Russia 来源出处: Physical Review B (Condensed Matter)(Phys. Rev. B, Condens. Matter (USA)),1996/04/15,53(15):10078-85 摘要: We work out a theory of the voltage-dependent noise in semiconductor nanowires under the condition of non-Ohmic phonon-assisted quasiballistic transport. We assume that weak scattering of the electrons confined within the nanowire is due to their interaction with the bulk acoustic and/or optical phonons. A general expression for the noise is derived. It is used to consider particular cases of interest. The dependence of noise intensity on the applied voltage is investigated. For low temperatures, a remarkable threshold effect is predicted 关键词: electron-phonon interactions;nanostructured materials;semiconductor quantum wires;shot noise;shot noise;phonon-assisted transport;quasiballistic nanowires;voltage-dependent noise;semiconductor nanowires;nonOhmic quasiballistic transport;weak electron scattering;bulk acoustic phonon-electron interaction;optical phonon-electron interaction;noise intensity;low temperatures;threshold effect