Laser direct writing of oxide structures on hydrogen-passivated silicon surfaces

2019-10-10 10:54:14

The silicon oxidation laser etching

责任者: Mullenborn, M.;Birkelund, A.K.;Grey, F.;Madsen, S. 单位: Microelectron. Center, Tech. Univ., Lyngby, Denmark 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),1996/11/11,69(20):3013-15 摘要: A focused laser beam has been used to induce oxidation of hydrogen-passivated silicon. The scanning laser beam removes the hydrogen passivation locally from the silicon surface, which immediately oxidizes in air. The process has been studied as a function of power density and excitation wavelength on amorphous and crystalline silicon surfaces in order to determine the depassivation mechanism. The minimum linewidth achieved is about 450 nm using writing speeds of up to 100 mm/s. The process is fully compatible with local oxidation of silicon by scanning probe lithography. Wafer-scale patterns can be generated by laser direct oxidation and complemented with nanometer resolution by scanning probe techniques. The combined micro- and nanoscale pattern can be transferred to the silicon in a single etching step by either wet or dry etching techniques 关键词: elemental semiconductors;etching;hydrogen;oxidation;passivation;photolithography;silicon;Si:H surfaces;laser direct writing;oxidation;passivation;power density;excitation wavelength;depassivation mechanism;scanning probe lithography;wafer-scale patterns;microscale pattern;nanoscale pattern;wet or dry etching;dry etching;Si:H