A silicon nanocrystals based memory

2019-10-10 09:49:28

The memory silicon nanocrystals threshold

责任者: Tiwari, S.;Rana, F.;Hanafi, H.;Hartstein, A.;Crabbe, E.F.;Chan, K. 单位: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),1996/03/04,68(10):1377-9 摘要: A new memory structure using threshold shifting from charge stored in nanocrystals of silicon (≈5 nm in size) is described. The devices utilize direct tunneling and storage of electrons in the nanocrystals. The limited size and capacitance of the nanocrystals limit the numbers of stored electrons. Coulomb blockade effects may be important in these structures but are not necessary for their operation. The threshold shifts of 0.2-0.4 V with read and write times less than 100s of a nanosecond at operating voltages below 2.5 V have been obtained experimentally. The retention times are measured in days and weeks, and the structures have been operated in an excess of 109 cycles without degradation in performance. This nanomemory exhibits characteristics necessary for high density and low power 关键词: elemental semiconductors;nanotechnology;quantum interference devices;semiconductor storage;silicon;tunnelling;memory structure;threshold shifting;nanocrystals;direct tunneling;capacitance;Coulomb blockade;retention times;high density;low power;semiconductor;5 nm;2.5 V;Si