Localization in semiconductor quantum-wire nanostructures

2019-10-08 14:39:21

potential quantum range localization mobility

责任者: Dongzi Liu;Das Sarma, S. 单位: Dept. of Phys., Maryland Univ., College Park, MD, USA 来源出处: Physical Review B (Condensed Matter)(Phys. Rev. B, Condens. Matter (USA)),1995/05/15,51(19):13821-3 摘要: Localization properties of quasi-one-dimensional quantum-wire nanostructures are investigated using the transfer-matrix Lyapunov-exponent technique. We calculate the localization length as a function of the effective mean-field mobility assuming the random disorder potential to arise from dopant-induced short-range δ-function or finite-range Gaussian impurity scattering. The localization length increases approximately linearly with the effective mobility, and is also enhanced by finite-range disorder. There is a sharp reduction in the localization length when the chemical potential crosses the second subband 关键词: carrier mobility;impurity scattering;localised states;semiconductor quantum wires;quasi-1D nanostructures;semiconductor quantum-wire;transfer-matrix Lyapunov-exponent;localization length;effective mean-field mobility;random disorder potential;short-range δ-function;finite-range Gaussian impurity scattering;chemical potential