Fabrication of patterned arrays with alternating regions of aluminum and porous

2019-10-03 22:04:25

aluminum porous arrays fabrication oxide

责任者: Barela, Marcos J.;Brevnov, Dmitri A.;Bauer, Todd M.;Lopez, Gabriel P.;Atanassov, Plamen B. 单位: Department of Chemical Engineering, Ctr. for Micro-Engineered Materials, University of New Mexico, Albuquerque, NM 87131, United States 来源出处: Electrochemical and Solid-State Letters,2005,8(1):4-5- 摘要: Fabrication of patterned anodic aluminum oxide arrays using a dense layer of barrier aluminum oxide as the anodization mask is described. This fabrication process includes patterning of the aluminum film with a photoresist and brief anodization at a high voltage. The photoresist is then removed and the aluminum film is again anodized at a low voltage to grow porous aluminum oxide. Using this procedure, we are able to fabricate anodic aluminum oxide arrays on silicon wafers consisting of alternating regions of porous aluminum oxide and aluminum metal perpendicular to the silicon substrate. © 2004 The Electrochemical Society. All rights reserved. 关键词: Alumina;Nanostructured materials;Fabrication;Anodic oxidation;Electric potential;Integrated circuits;Silicon wafers;Microelectromechanical devices;Photolithography;Anodic aluminium oxide (AAO);MEMS;Micro-reactors;Nanofluidic devices