Optical phonon modes in graded III-V nitride quantum wells

2019-09-27 15:50:00

optical quantum modes phonon wells

责任者: Albuquerque, E.L.;Vilela, R.C.;Nobre, E.F.;Costa Filho, R.N.;Freire, V.N.;Farias, G.A. 单位: Departamento de Fisica, Universidade Federal do Rio Grande do Norte, 59072-970 Natal, RN, Brazil 来源出处: Solid State Communications,2005,135(5):308-313 摘要: The dispersion relation for optical phonon modes in graded wurtzite AlN/GaN and AlN/InN quantum wells is calculated taking into account the existence of interfacial transition regions. We make use of a model based on the macroscopic theory developed by Loudon, known as the continuum dielectric model. The optical phonon modes are modelled considering only the electrostatic boundary conditions (neglecting retardation effects), in the absence of charge transfer between ions. We show that the graded interfaces strongly shift the frequencies of the phonon modes of the otherwise abrupt nitrides quantum wells. © 2005 Elsevier Ltd. All rights reserved. 关键词: Semiconductor quantum wells;Nitrides;Phonons;Nanostructured materials;Semiconductor materials;Optical properties;Dispersion (waves);Charge transfer;Semiconducting gallium compounds;Raman scattering;Mathematical models;Interfacial transition regions;Optical phonon modes;Electrostatic boundary conditions;Optical gain