Reduction of acoustic-phonon deformation potential in one-dimensional array of S

2019-09-17 13:00:25

Si deformation potential acoustic phonon

责任者: Uno, Shigeyasu;Mori, Nobuya;Nakazato, Kazuo;Koshida, Nobuyoshi;Mizuta, Hiroshi 单位: Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Cavendish Laboratory, Cambridge, CB3 0HE, United Kingdom 来源出处: Journal of Applied Physics,2005,97(11):113506- 摘要: The scattering potential for the acoustic deformation potential scattering in a one-dimensional silicon quantum dot array interconnected by thin oxide layers is theoretically investigated. One-dimensional phonon normal modes are numerically obtained using the linear atomic chain model. The strain caused by an acoustic-phonon vibration is absorbed by the oxide layers, resulting in the reduction of the strain in the Si dots. This effect eventually leads to ~40% reduction of the scattering potential all over the structure. The amount of the reduction does not depend on the phonon energy, but rather on the ratio of the Si dot size to the oxide thickness. © 2005 American Institute of Physics. 关键词: Acoustics;Silicon compounds;Semiconductor quantum dots;Vibrations (mechanical);Phonons;Grain boundaries;Nanotechnology;Tunnel oxides;Acoustic-phonons;Acoustic deformation;Acoustic-phonon vibrations