Proton and anion distribution and line edge roughness of chemically amplified el

2019-09-11 21:51:43

distribution edge roughness proton LER

责任者: Kozawa, Takahiro;Yamamoto, Hiroki;Saeki, Akinori;Tagawa, Seiichi 单位: Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan 来源出处: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,2005,23(6):2716-2720 摘要: Nanoscale resist topography such as line edge roughness (LER) or line width roughness (LWR) is the most serious concern in sub-100 nm fabrication. Many factors have been reported to affect LER. However, the cause of LER is still unclear. We calculated proton and anion distribution of chemically amplified electron beam resists in order to make clear the cause of LER. Counter anion distribution is significantly different from proton distribution. Counter anions are inhomogeneously distributed outside a relatively smooth edge of proton distribution. This is caused by the fact that acid generators can react with low-energy ( [similar to] 0 eV) electrons. The inhomodeneous distribution of counter anions outside proton distribution is considered to contribute to LER formation in chemically amplified resists for post optical lithographies. © 2005 American Vacuum Society. 关键词: Photoresists;Electron beams;Protons;Negative ions;Surface roughness;Amplification;Photolithography;Line edge roughness (LER);Anion distribution;Electron beam resists;Line width roughness (LWR)