Excellent field-emission properties of P-doped GaN nanowires

2019-09-11 21:46:00

field electron GaN emission nanowires

责任者: Liu, B.D.;Bando, Y.;Tang, C.C.;Xu, F.F.;Golberg, D. 单位: Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan 来源出处: Journal of Physical Chemistry B,2005,109(46):21521-21524 摘要: GaN nanowires with P doping were synthesized via a simple thermal evaporation process. The P-doped GaN nanowires have average diameters of [similar to] 100 nm and lengths up to tens of micrometers. Scanning electron microscope and high-resolution field-emission transmission electron microscope analyses revealed that P doping results in a rough surface morphology of GaN nanowires. Field-emission measurements showed that P doping effectively decreases the turn-on field of GaN nanowire to 5.1 V/μm, holding promise of application as an electron emitter. The rough surface is responsible for enhancement of the field-emission properties of GaN nanowires. © 2005 American Chemical Society. 关键词: Phosphorus;Doping (additives);Gallium nitride;Nanostructured materials;Synthesis (chemical);Evaporation;Scanning electron microscopy;High resolution electron microscopy;Surface roughness;Nanowires;Field-emission properties