Direct evidence for root growth of vertically aligned single-walled carbon nanot

2019-09-11 20:36:53

growth Deposition chemical vapor nanotubes

责任者: Iwasaki, Takayuki;Zhong, Goufang;Aikawa, Takumi;Yoshida, Tsuyoshi;Kawarada, Hiroshi 单位: Department of Science and Engineering, Waseda University, Shinjuku-ku, Tokyo, Japan 来源出处: Journal of Physical Chemistry B,2005,109(42):19556-19559 摘要: The root growth mode of extremely dense and vertically aligned single-walled carbon nanotubes (SWNTs) synthesized by microwave plasma chemical vapor deposition was clarified by a new method, marker growth, which does not require transmission electron microscopy. SWNT layers were grown intermittently on a substrate, and a line between the layers was used as a marker to identify the growth mode. Micro-Raman spectroscopy revealed that the SWNT layers have the same diameter distribution. © 2005 American Chemical Society. 关键词: Carbon nanotubes;Semiconductor growth;Chemical vapor deposition;Microwaves;Transmission electron microscopy;Synthesis (chemical);Raman spectroscopy;Single-walled carbon nanotubes (SWNT);Microwave plasma chemical vapor deposition;Diameter distribution