Transmission electron microscopic observation of nanoindentations made on ductil

2019-09-11 20:24:14

load amorphous electron silicon ductile

责任者: Yan, Jiwang;Takahashi, Hirokazu;Tamaki, Junichi;Gai, Xiaohui;Kuriyagawa, Tsunemoto 单位: Department of Nanomechanics, Tohoku University, Aoba-ku, 980-8579, Sendai, Japan 来源出处: Applied Physics Letters,2005,87(21):211901- 摘要: Nanoindentation tests were performed on a ductile-machined silicon wafer with a Berkovich diamond indenter, and the resulting indents were examined with a transmission electron microscope. It was found that the machining-induced subsurface amorphous layer undergoes significant plastic flow, and the microstructure of the indent depends on the indentation load. At a small load ( [similar to] 20 mN), most of the indented region remains to be amorphous with minor crystalline nuclei; while under a large load ( [similar to] 50 mN), the amorphous phase undergoes intensive recrystallization. The understanding and utilization of this phenomenon might be useful for improving the microscopic surface properties of silicon parts produced by a ductile machining process. © 2005 American Institute of Physics. 关键词: Silicon wafers;Nanostructured materials;Indentation;Ductility;Transmission electron microscopy;Plasticity;Recrystallization (metallurgy);Microstructure;Nanoindentation;Diamond indenter;Amorphous layers;Microscopic surface