AFM scratching and metal deposition through insulating layers on silicon

2019-09-11 20:10:32

Si science Deposition insulating scratching

责任者: Santinacci, L.;Zhang, Y.;Schmuki, P. 单位: Department of Materials Science, WW4-LKO, University of Erlangen-Nuremberg, D-91058 Erlangen, Germany 来源出处: Surface Science,2005,597(1-3):11-19 摘要: The present work deals with semiconductor nano-patterning technique based on scratching an insulating layer using the tip of either a micro-indenter or an atomic force microscope. The insulating or masking layer can be a thin oxide film (10 nm thick) grown on a p-Si (1 0 0) or self-assembled organic monolayer covalently bound to a n-Si (1 1 1) surface. Electrochemical techniques are used for Cu deposition in the openings made by scratching through the masking layers. Engraving properties at both micro- and nanoscale are investigated. It is shown that under optimized deposition parameters selective and well-defined metallic structures onto Si surfaces can be produced with a lateral resolution in the several 100 nm range. © 2005 Elsevier B.V. All rights reserved. 关键词: Semiconducting silicon;Atomic force microscopy;Electrodeposition;Nanostructured materials;Thin films;Self assembly;Monolayers;Electrochemistry;Parameter estimation;Silica;Electrochemical metal deposition;Immersion plating;Metallic structures