High-density and well-aligned carbon nanotube films on silicon-carbide wafers

2019-09-11 00:53:40

carbon CNTs carbide Japan wafers

责任者: Kusunoki, Michiko 单位: Japan Fine Ceramics Center, Atsuta-ku, Nagoya-shi 456-8587, Japan 来源出处: Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan,2005,113(1322):637-641 摘要: Well-aligned carbon nanotube (CNT) films were found to self-organize by surface decomposition of SiC (0001 over-bar ) wafers. High-resolution transmission electron microscopy and atomic force microscopy revealed that hemispherical nanocaps are generated all over the surface in the initial stage from 1200 to 1250°C. The diameter of grown CNTs is determined initially with that of the initial nanocaps. Furthermore, corresponding electron diffraction patterns showed zigzag-type CNTs selectively grow by heat-treating at a small heating rate of 1°C/min. This is a unique method to synthesize CNTs with a unique structure. The CNTs are considered to be constructed by recrystallization with a slight diffusion of carbon atoms built around the skeleton of SiC. In this paper, the formation mechanism will be proposed from the view point of crystallography. 关键词: Silicon carbide;Carbon nanotubes;Silicon wafers;Density (specific gravity);Atomic force microscopy;Crystallization;Diffusion;Alignment;Surface decomposition;Self-organize;Silicon carbide wafers;Carbon atoms