Size-dependent photoconductivity in MBE-grown GaN - Nanowires

2019-09-10 01:30:50

Diameter column dependent Fermi Julich

责任者: Calarco, Raffaella;Marso, Michel;Richter, Thomas;Aykanat, Ali I.;Meijers, Ralph;Hart, Andre V.D.;Stoica, Toma;Luth, Hans 单位: Institute of Thin Films and Interfaces (ISG1), cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Julich, 52425 Julich, Germany 来源出处: Nano Letters,2005,5(5):981-984 摘要: We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism. The essential ingredient for the interpretation of this effect is a diameter dependent recombination barrier, which arises from the interplay between column diameter and space charge layer extension at the column surface. © 2005 American Chemical Society. 关键词: Nanostructured materials;Gallium nitride;Photoconductivity;Molecular beam epitaxy;Ultraviolet radiation;Fermi level;Photocurrents;Current voltage characteristics;Metallizing;Permittivity;Photoemission;X ray photoelectron spectroscopy;Electrical transport;Nanowhiskers;Surface Fermi-level pinning;Space charges