Spin-dependent single electron tunneling in double tunnel junctions with a nano-

2019-08-18 22:29:44

single materials tunneling dependent junctions

责任者: Nakajima, K.;Inomata, K. 单位: SFI Laboratory, Department of Physics, Trinity College, Dublin 2, Dublin, Ireland 来源出处: Journal of Magnetism and Magnetic Materials,2004,272-276(SUPPL 1):1519-1520- 摘要: We have examined the spin-dependent tunneling properties of ferromagnetic double tunnel junctions with a nanogranular ferromagnetic intermediate layer, whose average grain size is about 2 nm. At low temperatures, samples show a linear current-voltage characteristic at low voltages, which indicate elastic coherent tunneling. In this regime, the conductances for both parallel and anti-parallel configurations of the magnetizations of the grains fluctuate to the applied bias voltage, with spin-dependent periods. The tunnel magnetoresistance ratio can be as large as 100%. We can conclude that we have observed a spin-dependent single electron tunneling via a single discrete level for the first time in a metallic system. © 2003 Elsevier B.V. All rights reserved. 关键词: Electron tunneling;Tunnel junctions;Granular materials;Nanostructured materials;Ferromagnetic materials;Grain size and shape;Current voltage characteristics;Magnetoresistance;Tunnel magnetoresistance;Single electron tunneling;Metallic system;Energy quantization