Noise performance of the radio-frequency single-electron transistor

2019-08-18 16:33:22

single frequency noise electron charge

责任者: Roschier, Leif;Hakonen, P.;Bladh, K.;Delsing, P.;Lehnert, K.W.;Spietz, Lafe;Schoelkopf, R.J. 单位: Low Temperature Laboratory, Helsinki University of Technology, FIN-02015 Helsinki, Finland 来源出处: Journal of Applied Physics,2004,95(3):1274-1286 摘要: Measurements were performed on aluminum and multiwalled carbon nanotube radio-frequency single-electron transistors (RF-SETs) and analyzed the results carefully. A detailed noise model based on scattering matrix and noise wave formalisms was developed. The signal-to-noise ratios obtained from the model agree well with the measured charge sensitivities. It was found that, in the setup, the first stage HEMT amplifier was the most inadequate component contributing nearly all of the charge noise. 关键词: High electron mobility transistors;Radio frequency amplifiers;Spurious signal noise;Impedance matching (electric);Semiconductor device models;Charge carriers;Radio frequency single electron transistor;Impedance transformer;Amplifier noise