Efficient Raman amplification in silicon-on-insulator waveguides

2019-08-14 10:18:19

optical silicon Raman insulator gain

责任者: Liang, T.K.;Tsang, H.K. 单位: Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, N.T., Hong Kong 来源出处: Applied Physics Letters,2004,85(16):3343-3345 摘要: We describe a silicon-on-insulator waveguide Raman amplifier which achieves a large fiber-to-fiber optical gain of 6.8 dB using stimulated Raman scattering in a 1.7-cm-long silicon waveguide. By using picosecond pulse pumping at 1557.4 nm wavelength, high net optical gain at the first-order Stokes wavelength of 1694.6 nm was measured. The optical loss from two-photon absorption generated free carriers was reduced by using a low pulse duty cycle and picosecond pulse pumping. ©2004 American Institute of Physics. 关键词: Light amplifiers;Optical waveguides;Silicon on insulator technology;Raman scattering;Optical pumping;Silicon;Carrier concentration;Optical gain;Stokes wavelength;Silicon nanocrystals