Near-band edge light emission from silicon semiconductor on insulator diodes

2019-08-14 08:10:18

light silicon emission emitting diodes

责任者: Zhao, J.;Zhang, G.;Trupke, T.;Wang, A.;Hudert, F.;Green, M.A. 单位: Centre for Photovoltaic Engineering, University of New South Wales, Sydney, NSW 2052, Australia 来源出处: Applied Physics Letters,2004,85(14):2830-2832 摘要: The light-emitting diodes designed and fabricated on commercial crystalline silicon semiconductor on insulator wafers was analyzed. It was observed that the diodes emitted strong infrared light under forward bias conditions with an external quantum efficiency of 2×10-6. It was found that due to negligble reabsorbtion of spontaneously emitted photons within the extremely thin silicon layer, the short wavelength emission was significantly stronger in relative terms compared to emission from bulk-silicon light-emitting devices. The Results show that relative intensity in the emission spectrum at short wavelength is higher. 关键词: Light emitting diodes;Electric insulators;Semiconducting silicon;Light emission;Crystalline materials;Infrared radiation;Silicon wafers;Quantum theory;Photoluminescence;Spectrum analysis;Porous silicon;Semiconductor quantum wells;Nanostructured materials;Etching;Plasma enhanced chemical vapor deposition;Insulator diodes;Reabsorption;Photonic crystals;Diffusion masks