Raman scattering spectroscopy of structure of amorphous carbon nitride films

2019-07-29 17:18:01

carbon films nitride Raman scattering

责任者: Ohkawara, Yoshiaki;Akasaka, Hiroki;Namiki, Kei-ichi C.;Ohshio, Shigeo;Ito, Haruhiko;Saitoh, Hidetoshi 单位: Department of Chemistry, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan 来源出处: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,2003,42(1):254-258 摘要: Amorphous carbon nitride (a-CNx), films without hydrogen were deposited with dehydrated cyanogen bromide using electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition. The structure of the a-CNx films was evaluated using a new Raman-active band at [similar to] 1300 cm-1, corresponding to sp3-hybridized carbon nitride. The Raman-active scattering band at [similar to] 1300 cm-1 became clearer with increasing hardness value of the films, suggesting that the hardness of the a-CNx films increases with extension of the three-dimensional structure of the films composed of C-N bonds. 关键词: Carbon nitride;Amorphous films;Raman scattering;Raman spectroscopy;Crystal structure;Electron cyclotron resonance;Chemical vapor deposition;Hardness;Chemical bonds;Indentation;Amorphous carbon nitride films;Raman scattering spectroscopy;Nanoindentation