Structural evolution in Ar+ implanted Si-rich silicon oxide

2019-07-23 02:06:22

Si oxide spectroscopy annihilation bombardment

责任者: Brusa, R.S.;Karwasz, G.P.;Mariotto, G.;Zecca, A.;Ferragut, R.;Folegati, P.;Dupasquier, A.;Ottaviani, G.;Tonini, R. 单位: Ist. Naz. per la Fis. della Materia, Dipartimento di Fisica, Universita di Trento, I-38050 Povo (TN), Italy 来源出处: Journal of Applied Physics,2003,94(12):7483-7492 摘要: The structural and chemical effects of the release of local energy by Ar+ ion bombardment produced by plasma enhanced chemical vapor deposition (PECVD) in SiOx films were studied. It was observed that the ion bombardment of Si-rich oxide overlayers on a c-Si substrate promotes the early formation of a-Si nanoparticles in the oxide. The formation of disordered silicon nanostructures was detected by using Raman scattering and Fourier transform infrared (FTIR) spectroscopy. A brief description of the different annihilation routes in condensed matter was presented. 关键词: Thin films;Silica;Argon;Hydrogen;Ion bombardment;Stoichiometry;Doppler effect;Heat treatment;Electronics packaging;Radiation damage;Amorphization;Positron annihilation spectroscopy;Medical device packaging;Depth-resolved positron annihilation Doppler spectroscopy