Phonon amplification in a quasi-one-dimensional GaAs quantum channel

2019-07-11 23:33:14

channel field dimensional amplification phonons

责任者: Nunes, O.A.C.;Fonseca, A.L.A.;Agrello, D.A. 单位: Institute of Physics, University of Brasilia, 70919-970 Brasilia-DF, Brazil 来源出处: Superlattices and Microstructures,2002,32(1):49-57 摘要: We propose a calculation for the amplification coefficient γ-q of acoustical phonons interacting with electrons in a quasi-one-dimensional GaAs channel subjected to an external dc electric field. Two regimes of temperatures have been investigated and it has been found, by considering only intrasubband transitions, that the amplification coefficient for a particular frequency, and for phonons propagating along the channel length (z-axis), is a step-like function of the applied field at low temperatures. For high temperatures the amplification coefficient shows an exponential behavior as a function of the applied electric field. Furthermore, provided the one-dimensional quantum channel has high electron mobility values, coherent acoustic-phonons can be amplified in modest electric fields. © 2002 Elsevier Science Ltd. All rights reserved. 关键词: Semiconducting gallium arsenide;Phonons;Semiconductor quantum wires;Electron gas;Electric field effects;Quantum theory;Amplification;Nanostructured materials;High temperature effects;Piezoelectric devices;Electron-phonon interaction;Sound amplification;Quantum channels;Acoustic phonons