Chemical approach to high-resolution patterning on self-assembled monolayers usi

2019-07-10 00:37:08

force HCl resist middot lithographic

责任者: Lee, Wonbae;Kim, Eung Ryu;Lee, Haiwon 单位: Department of Chemistry, Hanyang University, Seoul 133-791, South Korea 来源出处: Langmuir,2002,18(22):8375-8380 摘要: Atomic force microscope lithography on organic resist films has been studied for fabricating nanostructures. Mixed self-assembled monolayers (SAMs) of 1,12-diaminododecane·dihydrochloide (DAD·2HCl) and n-tridecylamine·hydrochloride (TDA·HCl) were fabricated on Si substrates in order to investigate the effect of terminal surface groups of SAM resist films on the efficacy of anodic patterning of silicon wafers using atomic force microscope lithography. The compositions of both charged quaternary ammonium and methyl functional groups at the surfaces of the mixed SAMs were controlled by the mixing ratio of the two molecules in a deposition solution, and their relative surface coverages were estimated by lateral force microscopy and contact angle measurement. Under the fixed anodization lithographic conditions, the size of protruded lines increased proportionally as the amount of DAD·2HCl component in the mixed SAM resist increased. The dopant type of a silicon substrate was also found to affect the lithographic results. On the basis of the determined mixing factors, a highly resolved and regular pattern with line widths of 48 nm was fabricated using a mixed SAM resist (DAD·2HCl/TDA·HCl = 6:4) on an n-doped silicon wafer at the lithographic scan speed of 500 μm/s. 关键词: Monolayers;Self assembly;Atomic force microscopy;Scanning tunneling microscopy;Lithography;Nanostructured materials;Substrates;Silicon wafers;Composition effects;Contact angle;Doping (additives);Diaminododecane dihydrochloride;Tridecylamine hydrochloride;Dopant;Lithographic scan speed