Ion beam analysis of Zn2-2xCuxInxS2 films

2019-07-07 07:56:04

film films PLD RBS stoichiometry

责任者: Spemann, D.;Vogt, J.;Butz, T.;Oppermann, D.;Lorenz, M.;Wagner, G.;Bente, K. 单位: Fakultat fur Physik/Geowissenchaften, Nukleare Festkorperphysik, Universitat Leipzig, D-04103 Leipzig, Germany 来源出处: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms,2002,190(1-4):667-672 摘要: Thin layers of ZnS-CuInS2 mixed crystals (called ZCIS) may be promising absorber materials for thin film solar cell applications. The ZCIS films studied here have been grown on (001) GaP, SiO2 and (0 1 2) CeO2/Al2O3 substrates with different stoichiometries by pulsed laser deposition (PLD). In order to optimize the film deposition process the thickness, stoichiometry and crystallinity of the films were determined by means of Rutherford backscattering spectrometry (RBS), particle induced X-ray emission (PIXE) and RBS/channeling using a 2 MeV He+ ion beam. Furthermore the stoichiometry of the targets used for the PLD was determined with backscattering spectrometry and PIXE using a 2 MeV H+ ion beam. A large variation in film thickness was observed and the film stoichiometry did not agree with the PLD-target stoichiometry in general. The element transfer efficiencies from the PLD-target to the deposited film varied substantially for the individual elements. Furthermore, on some films deposited on (0 0 1) GaP a remarkable out-diffusion of Cu into the substrate was found with RBS and confirmed by secondary neutral mass spectroscopy and transmission electron microscopy. RBS/channeling measurements show that mono-crystalline films can be grown on (0 0 1) GaP and (0 1 2) CeO2/Al2O3 substrates, however, they are characterized by a large defect density. © 2002 Elsevier Science B.V. All rights reserved. 关键词: Thin films;Semiconducting zinc compounds;Ion beams;Film growth;Solar cells;Stoichiometry;Pulsed laser deposition;Crystallization;Thickness measurement;Diffusion in solids;Nanostructured materials;Crystal defects;Substrates;Rutherford backscattering spectroscopy;Spectrometry;Transmission electron microscopy;X ray analysis;Neutral mass spectroscopy