Gate oxide prepared by nanometre silicon wet oxidation at low temperature for Si

2019-06-26 20:26:24

silicon oxidation gate SiGe oxide

责任者: Yang, P.F.;Li, J.C.;Xie, M.X.;Yang, M.H.;He, L.;Li, K.C.;Tan, K.Z.;Zhang, J. 单位: Dept. of Microelectronics Sci. Eng., Univ. Electron. Sci. Technol. China, Chengdu, Sichuan 610054, China 来源出处: Semiconductor Science and Technology,2001,16(12):972-974 摘要: A high-quality thin gate oxide for application in Si/SiGe heterostructure PMOSFETs is prepared by nanometre silicon wet oxidation at 750°C by taking full advantage of the peculiar phase in polysilicon thermal oxidation. The combination of low temperature and a short processing time prevents strain relaxation and Ge outdiffusion in the compressively strained SiGe channel. Its structural stability and interface quality are studied by x-ray double-crystal diffraction. Results of C-V characteristics and breakdown measurements indicate that the gate oxide exhibits a low fixed oxide charge density and a high dielectric breakdown field. Employing this gate oxide, Si/SiGe PMOSFETs with good output characteristics have been successfully fabricated. 关键词: Polysilicon;Semiconducting silicon compounds;Oxidation;Low temperature operations;MOSFET devices;Silica;X ray diffraction;Current voltage characteristics;Electric breakdown;Dielectric properties;High-quality thin gate oxide;Nanometre silicon wet oxidation;Polysilicon thermal oxidation