Characterization of SnO2 thin films grown from aqueous solutions

2019-06-22 14:29:57

nm films HCl Oxygen SnCl4

责任者: Supothina, Sitthisuntorn;De Guire, Mark R. 单位: Case Western Reserve Univ, Cleveland, OH, USA 来源出处: Thin Solid Films,2000,371(1):1-9 摘要: Nanocrystalline SnO2 thin films with the cassiterite structure and grains 5-10 nm in size were deposited from precipitating aqueous solutions of SnCl4×5H2O and HCl at 80 °C. The substrates were single-crystal {100} silicon wafers, either with or without sulfonate-functionalized self-assembled monolayer (SAM) coatings. Films, 60-70 nm thick, were obtained in 12 h from a medium of 2 mM SnCl4/0.4 M HCl. These films grew at a rate of approximately 9 nm h-1 during the first 4 h. Thicker films, 160 nm thick, containing cassiterite grains 5-10 nm in size were obtained by continuously flowing a solution of 2 mM SnCl4/0.2 M HCl past the substrates. The as-deposited films were uniform and adherent. They contained approximately 2-3 at.% Cl and excess oxygen (2<O/Sn<3). A detailed X-ray photoelectron spectroscopy (XPS) analysis of the oxygen content of the films indicates that the additional oxygen may be present in an amorphous tin oxyhydroxide phase. 关键词: Semiconducting films;Semiconducting tin compounds;Thin films;Semiconductor growth;Nanostructured materials;Grain size and shape;Deposition;Solutions;Precipitation (chemical);Transmission electron microscopy;X ray photoelectron spectroscopy;Silicon wafers;Single crystals;Self-assembled monolayer (SAM) coatings