Calculation of electrical properties of novel double-barrier metal oxide semicon

2019-06-15 14:42:43

current potential barriers double coulomb

责任者: Hatano, Tsuyoshi;Nomura, Akihiro;Yoshida, Masayoshi;Nakajima, Anri;Shibahara, Kentaro;Yokoyama, Shin 单位: Hiroshima Univ, Higashihiroshima, Jpn 来源出处: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,1999,38(1 B):399-402 摘要: We propose novel ultrasmall metal-oxide-semiconductor (MOS) transistors with double-potential barriers. The structure is similar to the lightly doped drain (LDD) MOS transistors with upper and lower gates. The double-potential barriers, which are controlled by the upper gate voltage, are formed under the side wall spacers. It is confirmed by simulation that the tunneling current through the double-potential barriers is larger than the thermally excited current at 77 K. Then, the Coulomb blockade effects, i.e., the suppression of the tunneling current in the vicinity of the zero drain voltage and the Coulomb oscillation, are observable at 77 K. 关键词: MOSFET devices;Nanotechnology;Gates (transistor);Semiconductor device structures;Potential energy;Electric potential;Electric currents;Electron tunneling;Electrostatics;Double depletion layer barriers;Coulomb blockade;Coulomb oscillation;Tunneling current;Potential barriers